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Enhanced Zn anode kinetics and reversibility are achieved at a high ZUR by guiding Zn²⁺plating underlying the SnO_1.17interphase with a regulated (101) orientation, surpassing those achieved by inducing Zn(002) plating overlying the interphase. 

This work demonstrates the design protocols for high-energy-density solid-state Li–S batteries (SSLSBs). Also, it highlights the challenging issues for achieving practical SSLSBs towards the application in next-level electric transportation. 

Despite the outstanding achievements in multiple areas such as displays and energy, oxide electronics has been limited to single-polar (n-type) applications due to the facile generation of oxygen vacancies as native donors. On the contrary, the processing of p-type oxides is restrained due to the high formation energy of native acceptors. Furthermore, the oxygen 2p orbitals of the majority of oxide semiconductors are anisotropic and localized to the valence band maximum (VBM), resulting in a large effective mass of holes and hence low carrier mobility. Hybrid orbital electronic configurations with cation d10 (closed shell structure) and cation s2 (pseudo-closed structure) have been suggested initially in complex oxides (e.g., CuMO2 where M= Al, Ga, and In; and SrCu2O2) to delocalize the oxygen 2p orbitals from the VBM. However, these complex oxides require high temperatures to process and are difficult to engineer the electrical properties of carrier density and carrier mobility due to the correlated nature of multi-cation species. Several single-cation p-type oxides such as PbO, Bi2O3, and SnO have emerged as well, where the energy level of a unique s-orbital of cations is similar to oxygen 2p orbitals, forming strong hybrid structures. In addition, a simpler single-cation structure leads to easier control of electrical properties required in practical device applications such as thin film transistors (TFT) and complementary logic inverters. We previously reported scalable processing of p-type SnOx through thermodynamic-based interfacial reactions as well as reactive sputtering.¹More recently, we also suggested multi-modal encapsulation to enhance TFT on- and off-state behaviors and identified a defect complex as an effective p-type doping agent.²However, challenges remain since the TFT off-state current is large, and the defect/trap state density is high. In this presentation, we share our approaches to engineer the off-state current and passivate the defect/trap states. In addition to channel thickness optimization, intrinsic (Sn vacancy or oxygen interstitial) and extrinsic (H-related species) doping strategies to adjust channel carrier density will be compared. The performance of several surface treatments (oxygen plasma and UV) and TFT back channel encapsulations (SiO2 and Al2O3) will be systematically compared. Then, the device performance of optimized p-type SnO TFTs and complementary inverters with n-type InZnO TFTs will be discussed. ReferencesLee et al., ACS Applied Materials & Interfaces, 13 (46), 55676–55686 (2021)Lee et al., ACS Applied Materials & Interfaces, 14 (48), 53999–54011 (2022) Acknowledgments This work was partially supported by National Science Foundation, Award number ECCS-1931088 and CBET-2207302. 

Finite element analysis provides visual insights into conductive path evolution in a SiO₂-based memristor. Electrochemical impedance spectroscopy experimentally validated the theoretical findings by interpreting with an equivalent circuit. 

Abstract We report on the enhancement of electrical properties of unsubstituted polythiophene (PT) through oxidative chemical vapor deposition (oCVD) and mild plasma treatment. The work function of p-type oCVD PT increases after the treatment, indicating the Fermi level shift toward the valence band edge and an increase in carrier density. In addition, regardless of initial values, nearly the same work function is obtained for all the plasma-treated oCVD PT films as high as ∼5.25 eV, suggesting the pseudo-equilibrium state is reached in the oCVD PT from the plasma treatment. This increase in carrier density after plasma treatment is attributed to the activation of initially not-activated dopant species (i.e. neutrally charged Br), which is analogous to the release of trapped charge carriers to the valence band of the oCVD PT. The enhancement of electrical properties of oCVD PT is directly related to the improvement of the thin film transistor performance such as drain current on/off ratio, ∼10³and field effect mobility, 2.25 × 10⁻²cm²Vs⁻¹, compared to untreated counterparts of 10²and 0.09 × 10⁻²cm Vs⁻¹, respectively. 

Memristors, a two-terminal device, have a resistance that can be changed and retained in two or more different states when subjected to electrical stresses. This unique function makes memristors now an attractive area of research for next-generation electronic devices such as memory and advanced computation. However, credible characterization methods for memristors are not fully established yet to understand fundamental working mechanisms and objectively evaluate figures of merit performance. This review encompasses various characterization methods from materials to electrical characteristics to identify the fundamentals of memristor operations. Meanwhile, large performance variation is the main bottleneck hindering the adoption of this class of devices in practical applications. Thus, the second part of this article focuses on the types of variation and other reliability issues of memristors. Possible strategies to enhance reliability are suggested as well. Topics covered in this review on memristors’ characterization techniques and reliability are of significant relevance to many studies that seek to advance the state of the art in electronic devices and systems towards neuromorphic computing. 

The driving mileage of electric vehicles (EVs) has been substantially improved in recent years with the adoption of Ni-based layered oxide materials as the battery cathode. The average charging period of EVs is still time-consuming, compared with the short refueling time of an internal combustion engine vehicle. With the guidance from the United States Department of Energy, the charging time of refilling 60% of the battery capacity should be less than 6 min for EVs, indicating that the corresponding charging rate for the cathode materials is to be greater than 6C. However, the sluggish kinetic conditions and insufficient thermal stability of the Ni-based layered oxide materials hinder further application in fast-charging operations. Most of the recent review articles regarding Ni-based layered oxide materials as cathodes for lithium-ion batteries (LIBs) only touch degradation mechanisms under slow charging conditions. Of note, the fading mechanisms of the cathode materials for fast-charging, of which the importance abruptly increases due to the development of electric vehicles, may be significantly different from those of slow charging conditions. There are a few review articles regarding fast-charging; however, their perspectives are limited mostly to battery thermal management simulations, lacking experimental validations such as microscale structure degradations of Ni-based layered oxide cathode materials. In this review, a general and fundamental definition of fast-charging is discussed at first, and then we summarize the rate capability required in EVs and the electrochemical and kinetic properties of Ni-based layered oxide cathode materials. Next, the degradation mechanisms of LIBs leveraging Ni-based cathodes under fast-charging operation are systematically discussed from the electrode scale to the particle scale and finally the atom scale (lattice oxygen-level investigation). Then, various strategies to achieve higher rate capability, such as optimizing the synthesis process of cathode particles, fabricating single-crystalline particles, employing electrolyte additives, doping foreign ions, coating protective layers, and engineering the cathode architecture, are detailed. All these strategies need to be considered to enhance the electrochemical performance of Ni-based oxide cathode materials under fast-charging conditions. 

Ever-increasing demands for energy, particularly being environmentally friendly have promoted the transition from fossil fuels to renewable energy.¹Lithium-ion batteries (LIBs), arguably the most well-studied energy storage system, have dominated the energy market since their advent in the 1990s.²However, challenging issues regarding safety, supply of lithium, and high price of lithium resources limit the further advancement of LIBs for large-scale energy storage applications.³Therefore, attention is being concentrated on an alternative electrochemical energy storage device that features high safety, low cost, and long cycle life. Rechargeable aqueous zinc-ion batteries (ZIBs) is considered one of the most promising alternative energy storage systems due to the high theoretical energy and power densities where the multiple electrons (Zn²⁺) . In addition, aqueous ZIBs are safer due to non-flammable electrolyte (e.g., typically aqueous solution) and can be manufactured since they can be assembled in ambient air conditions.⁴As an essential component in aqueous Zn-based batteries, the Zn metal anode generally suffers from the growth of dendrites, which would affect battery performance in several ways. Second, the led by the loose structure of Zn dendrite may reduce the coulombic efficiency and shorten the battery lifespan.⁵ Several approaches were suggested to improve the electrochemical stability of ZIBs, such as implementing an interfacial buffer layer that separates the active Zn from the bulk electrolyte.⁶However, the and thick thickness of the conventional Zn metal foils remain a critical challenge in this field, which may diminish the energy density of the battery drastically. According to a theretical calculation, the thickness of a Zn metal anode with an areal capacity of 1 mAh cm^-2is about 1.7 μm. However, existing extrusion-based fabrication technologies are not capable of downscaling the thickness Zn metal foils below 20 μm. Herein, we demonstrate a thickness controllable coating approach to fabricate an ultrathin Zn metal anode as well as a thin dielectric oxide separator. First, a 1.7 μm Zn layer was uniformly thermally evaporated onto a Cu foil. Then, Al₂O₃, the separator was deposited through sputtering on the Zn layer to a thickness of 10 nm. The inert and high hardness Al₂O₃layer is expected to lower the polarization and restrain the growth of Zn dendrites. Atomic force microscopy was employed to evaluate the roughness of the surface of the deposited Zn and Al₂O₃/Zn anode structures. Long-term cycling stability was gauged under the symmetrical cells at 0.5 mA cm^-2for 1 mAh cm^-2. Then the fabricated Zn anode was paired with MnO₂as a full cell for further electrochemical performance testing. To investigate the evolution of the interface between the Zn anode and the electrolyte, a home-developed in-situ optical observation battery cage was employed to record and compare the process of Zn deposition on the anodes of the Al₂O₃/Zn (demonstrated in this study) and the procured thick Zn anode. The surface morphology of the two Zn anodes after circulation was characterized and compared through scanning electron microscopy. The tunable ultrathin Zn metal anode with enhanced anode stability provides a pathway for future high-energy-density Zn-ion batteries.Obama, B., The irreversible momentum of clean energy.Science2017,355(6321), 126-129.Goodenough, J. B.; Park, K. S., The Li-ion rechargeable battery: a perspective.J Am Chem Soc2013,135(4), 1167-76.Li, C.; Xie, X.; Liang, S.; Zhou, J., Issues and Future Perspective on Zinc Metal Anode for Rechargeable Aqueous Zinc‐ion Batteries.Energy & Environmental Materials2020,3(2), 146-159.Jia, H.; Wang, Z.; Tawiah, B.; Wang, Y.; Chan, C.-Y.; Fei, B.; Pan, F., Recent advances in zinc anodes for high-performance aqueous Zn-ion batteries.Nano Energy2020,70.Yang, J.; Yin, B.; Sun, Y.; Pan, H.; Sun, W.; Jia, B.; Zhang, S.; Ma, T., Zinc Anode for Mild Aqueous Zinc-Ion Batteries: Challenges, Strategies, and Perspectives.Nanomicro Lett2022,14(1), 42.Yang, Q.; Li, Q.; Liu, Z.; Wang, D.; Guo, Y.; Li, X.; Tang, Y.; Li, H.; Dong, B.; Zhi, C., Dendrites in Zn-Based Batteries.Adv Mater2020,32(48), e2001854. Acknowledgment This work was partially supported by the U.S. National Science Foundation (NSF) Award No. ECCS-1931088. S.L. and H.W.S. acknowledge the support from the Improvement of Measurement Standards and Technology for Mechanical Metrology (Grant No. 22011044) by KRISS. Figure 1